---
format: "aidr-story-markdown/v1"
id: "b3b59c330be1da5443d5592f0688d6bb21369bbb9028dcf6c9c2a575c4b47b10"
canonical_url: "https://aidr.today/b3b59c33?lang=en"
title: "ASML Doubles EUV Mask Size to 12 Inch With Samsung and TSMC to Cut AI Costs"
lang: "en"
requested_lang: "en"
available_langs: ["en","vi"]
translation_fallback: null
fallback_fields: []
published_at: "2026-09-08T14:54:21.000Z"
category: "Chips"
topics: ["asml","samsung","tsmc","chips","infra"]
source_urls: ["https://huggingnews.com/tech/asml-doubles-euv-mask-size-to-12-inch-with-samsung-and-tsmc-to-cut-ai-co-4b29a3fb","https://x.com/Reuters/status/2097215886536937613","https://x.com/CNBC/status/2097244314233401452","https://x.com/wallstengine/status/2097268421654360290","https://x.com/wallstengine/status/2097266667701371143","https://x.com/business/status/2097207073003999647","https://x.com/financialjuice/status/2097204697400574262","https://x.com/financialjuice/status/2097204730648723817"]
summary: "Samsung plans to integrate High NA EUV lithography into high volume DRAM manufacturing by 2028 in an industry first. The chipmaker is joining Taiwan Semiconductor Manufacturing Co. and ASML in a new initiative to replace the 6 inch photomask format with 12 inch masks, targeting a pilot line by 2031 and full advanced node production by 2033. The move to double the mask size targets the elimination of stitching constraints that currently force the combination of two half fields to create a single die for complex AI chips. TSMC intends to use High NA EUV in high volume manufacturing starting in 2030. This expanded partnership focuses on boosting fab productivity and reducing semiconductor manufacturing costs for the world's two largest chipmakers."
---

# ASML Doubles EUV Mask Size to 12 Inch With Samsung and TSMC to Cut AI Costs

> [Open the canonical story](<https://aidr.today/b3b59c33?lang=en>)

**Published:** 2026-09-08T14:54:21.000Z
**Category:** Chips
**Topics:** asml, samsung, tsmc, chips, infra

## Summary

Samsung plans to integrate High NA EUV lithography into high volume DRAM manufacturing by 2028 in an industry first\. The chipmaker is joining Taiwan Semiconductor Manufacturing Co\. and ASML in a new initiative to replace the 6 inch photomask format with 12 inch masks, targeting a pilot line by 2031 and full advanced node production by 2033\. The move to double the mask size targets the elimination of stitching constraints that currently force the combination of two half fields to create a single die for complex AI chips\. TSMC intends to use High NA EUV in high volume manufacturing starting in 2030\. This expanded partnership focuses on boosting fab productivity and reducing semiconductor manufacturing costs for the world's two largest chipmakers\.

## Sources

- [Story source](<https://huggingnews.com/tech/asml-doubles-euv-mask-size-to-12-inch-with-samsung-and-tsmc-to-cut-ai-co-4b29a3fb>)
- [Story source](<https://x.com/Reuters/status/2097215886536937613>)
- [Supporting source](<https://x.com/CNBC/status/2097244314233401452>)
- [Supporting source](<https://x.com/wallstengine/status/2097268421654360290>)
- [Supporting source](<https://x.com/wallstengine/status/2097266667701371143>)
- [Supporting source](<https://x.com/business/status/2097207073003999647>)
- [Supporting source](<https://x.com/financialjuice/status/2097204697400574262>)
- [Supporting source](<https://x.com/financialjuice/status/2097204730648723817>)